SI2305DS-T1-GE3 - описание и поиск аналогов

SI2305DS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICAT

SMD Type MOSFET SMD Type P-Channel MOSFET SI2305DS (KI2305DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -8V RDS(ON) 0.052 (VGS = -4.5V) RDS(ON) 0.071 (VGS = -2.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 0.108 (VGS = -1.8V) +0.1 1.9-0.2 1. Gate G 2. Source 3. Drain S Absolute Maximum Ratings Ta

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.052 at VGS = - 4.5 V 3.5 TrenchFET Power MOSFETs 1.8 V Rated 0.071 at VGS = - 2.5 V - 8 3 0.108 at VGS = - 1.8 V 2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2305DS (A5)* * Mark

SMD Type MOSFET SMD Type P-Channel MOSFET SI2305DS (KI2305DS) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = -8V RDS(ON) 0.052 (VGS = -4.5V) 1 2 RDS(ON) 0.071 (VGS = -2.5V) D +0.1 +0.05 0.95 -0.1 0.1 -0.01 RDS(ON) 0.108 (VGS = -1.8V) +0.1 1.9 -0.1 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25