SI2305DS-T1-GE3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2305DS-T1-GE3
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 4.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ)
Ohm
Package:
SOT23
SI2305DS-T1-GE3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2305DS-T1-GE3
Datasheet (PDF)
0.1. Size:866K cn vbsemi
si2305ds-t1-ge3.pdf 
SI2305DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT
5.1. Size:1000K kexin
si2305ds-3.pdf
SMD Type MOSFETSMD TypeP-Channel MOSFETSI2305DS (KI2305DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V) RDS(ON)0.071 (VGS = -2.5V)1 2D +0.02+0.10.15 -0.020.95 -0.1 RDS(ON)0.108 (VGS = -1.8V)+0.11.9-0.21. GateG 2. Source3. DrainS Absolute Maximum Ratings Ta
6.1. Size:185K vishay
si2305ds.pdf
Si2305DSVishay SiliconixP-Channel 1.25-W, 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.052 at VGS = - 4.5 V 3.5 TrenchFET Power MOSFETs: 1.8 V Rated0.071 at VGS = - 2.5 V - 8 30.108 at VGS = - 1.8 V 2TO-236 (SOT-23) G 1 3 D S 2 Top View Si2305DS (A5)* * Mark
6.2. Size:999K kexin
si2305ds.pdf
SMD Type MOSFETSMD TypeP-Channel MOSFETSI2305DS (KI2305DS)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V)1 2 RDS(ON)0.071 (VGS = -2.5V)D +0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON)0.108 (VGS = -1.8V) +0.11.9 -0.11. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25
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