SI2351DS-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2351DS-T1
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035(typ) Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SI2351DS-T1

SI2351DS-T1 Datasheet (PDF)

..1. Size:892K cn vbsemi
si2351ds-t1.pdf

SI2351DS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

6.1. Size:219K vishay
si2351ds.pdf

Si2351DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.115 at VGS = - 4.5 V - 3.0 PWM OptimizedRoHS- 20 3.2 nCCOMPLIANT 100 % Rg Tested0.205 at VGS = - 2.5 V - 2.2TO-236 (SOT-23) G 1 3 D S 2 Top View Si2351DS (G1)*

9.1. Size:232K vishay
si2356ds.pdf

Si2356DSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.051 at VGS = 10 V 4.3For definitions of compliance please see0.054 at VGS = 4.5 V 40 4.1 3.8 nCwww.vishay.com/doc?999120.070 at VGS = 2.5 V 3.6APPLICATIONSTO-236

9.2. Size:1750K kexin
si2356ds.pdf

SMD Type MOSFETN-Channel MOSFETSI2356DS (KI2356DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V)1 2 RDS(ON) 51m (VGS = 10V) +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V)1. Gate2. Source3. DrainDGS Absolute Maximum Rati

9.3. Size:1761K kexin
si2356ds-3.pdf

SMD Type MOSFETN-Channel MOSFETSI2356DS (KI2356DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V)1 2 RDS(ON) 51m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V)1. Gate2. Source3. DrainDGS Absolute Maxim

9.4. Size:884K cn vbsemi
si2356ds.pdf

SI2356DSwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: