All MOSFET. SI2351DS-T1 Datasheet

 

SI2351DS-T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2351DS-T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

 SI2351DS-T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2351DS-T1 Datasheet (PDF)

 ..1. Size:892K  cn vbsemi
 si2351ds-t1.pdf

SI2351DS-T1 SI2351DS-T1

SI2351DS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 6.1. Size:219K  vishay
 si2351ds.pdf

SI2351DS-T1 SI2351DS-T1

Si2351DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.115 at VGS = - 4.5 V - 3.0 PWM OptimizedRoHS- 20 3.2 nCCOMPLIANT 100 % Rg Tested0.205 at VGS = - 2.5 V - 2.2TO-236 (SOT-23) G 1 3 D S 2 Top View Si2351DS (G1)*

 9.1. Size:232K  vishay
 si2356ds.pdf

SI2351DS-T1 SI2351DS-T1

Si2356DSVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.051 at VGS = 10 V 4.3For definitions of compliance please see0.054 at VGS = 4.5 V 40 4.1 3.8 nCwww.vishay.com/doc?999120.070 at VGS = 2.5 V 3.6APPLICATIONSTO-236

 9.2. Size:1750K  kexin
 si2356ds.pdf

SI2351DS-T1 SI2351DS-T1

SMD Type MOSFETN-Channel MOSFETSI2356DS (KI2356DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V)1 2 RDS(ON) 51m (VGS = 10V) +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V)1. Gate2. Source3. DrainDGS Absolute Maximum Rati

 9.3. Size:1761K  kexin
 si2356ds-3.pdf

SI2351DS-T1 SI2351DS-T1

SMD Type MOSFETN-Channel MOSFETSI2356DS (KI2356DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V)1 2 RDS(ON) 51m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V)1. Gate2. Source3. DrainDGS Absolute Maxim

 9.4. Size:884K  cn vbsemi
 si2356ds.pdf

SI2351DS-T1 SI2351DS-T1

SI2356DSwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

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