SI2351DS-T1 - аналоги, параметры транзистора - Справочник транзисторов

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SI2351DS-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

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Si2351DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.115 at VGS = - 4.5 V - 3.0 PWM Optimized RoHS - 20 3.2 nC COMPLIANT 100 % Rg Tested 0.205 at VGS = - 2.5 V - 2.2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2351DS (G1)*

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Si2356DS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization 0.051 at VGS = 10 V 4.3 For definitions of compliance please see 0.054 at VGS = 4.5 V 40 4.1 3.8 nC www.vishay.com/doc?99912 0.070 at VGS = 2.5 V 3.6 APPLICATIONS TO-236

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SMD Type MOSFET N-Channel MOSFET SI2356DS (KI2356DS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 4.3 A (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 70m (VGS = 2.5V) 1. Gate 2. Source 3. Drain D G S Absolute Maximum Rati