SIR802DP-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIR802DP-T1-GE3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1725 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018(typ) Ohm
   Paquete / Cubierta: DFN5X6

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SIR802DP-T1-GE3 Datasheet (PDF)

0.1. Size:866K cn vbsemi
sir802dp-t1-ge3.pdf

SIR802DP-T1-GE3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOL

6.1. Size:509K vishay
sir802dp.pdf

New ProductSiR802DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH

9.1. Size:500K vishay
sir804dp.pdf

New ProductSiR804DPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di

9.2. Size:341K vishay
sir800dp.pdf

New ProductSiR800DPVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS

9.3. Size:477K vishay
sir808dp.pdf

SiR808DPVishay SiliconixN-Channel 25 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET25 7.5 nC0.0119 at VGS = 4.5 V Low Thermal Resistance PowerPAK 20Package with Low 1.07 mm Profile Optimized for High-Side Synchron

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