SIR802DP-T1-GE3 - аналоги, параметры транзистора

SIR802DP-T1-GE3 даташит

0.1. Size:866K cn vbsemi
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SIR802DP-T1-GE3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOL

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New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET 0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested 0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH

9.1. Size:500K vishay
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New Product SiR804DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested 0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di

9.2. Size:341K vishay
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New Product SiR800DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET 0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested 0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS