SIR802DP-T1-GE3 MOSFET Datasheet: N-Ch, 30V, 33A. Full specification with pinout and replacement list

SIR802DP-T1-GE3 Specs and Replacement

Type Designator: SIR802DP-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 typ Ohm

Package: DFN5X6

SIR802DP-T1-GE3 substitution

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SIR802DP-T1-GE3 datasheet

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