SIR802DP-T1-GE3 PDF and Equivalents Search

 

SIR802DP-T1-GE3 Specs and Replacement

Type Designator: SIR802DP-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 typ Ohm

Package: DFN5X6

SIR802DP-T1-GE3 substitution

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SIR802DP-T1-GE3 datasheet

 0.1. Size:866K  cn vbsemi
 sir802dp-t1-ge3.pdf pdf_icon

SIR802DP-T1-GE3

SIR802DP-T1-GE3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOL... See More ⇒

 6.1. Size:509K  vishay
 sir802dp.pdf pdf_icon

SIR802DP-T1-GE3

New Product SiR802DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.005 at VGS = 10 V 30 TrenchFET Gen III Power MOSFET 0.0057 at VGS = 4.5 V 20 30 15.5 nC 100 % Rg Tested 0.0076 at VGS = 2.5 V 30 100 % UIS Tested Compliant to RoH... See More ⇒

 9.1. Size:500K  vishay
 sir804dp.pdf pdf_icon

SIR802DP-T1-GE3

New Product SiR804DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0072 at VGS = 10 V 60 TrenchFET Power MOSFET 0.0078 at VGS = 7.5 V 100 60 24.8 nC 100 % Rg Tested 0.0103 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Di... See More ⇒

 9.2. Size:341K  vishay
 sir800dp.pdf pdf_icon

SIR802DP-T1-GE3

New Product SiR800DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0023 at VGS = 10 V 50 TrenchFET Gen III Power MOSFET 0.0026 at VGS = 4.5 V 20 50 41 nC 100 % Rg Tested 0.0034 at VGS = 2.5 V 50 100 % UIS Tested Compliant to RoHS... See More ⇒

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Detailed specifications: SI6913DQ-T1, SI7478DP-T1, SI9410BDY-T1, SI9933ADY, SI9948AEY-T1-E3, SI9955DY, SIR422DP-T1-GE3, SIR462DP-T1, 5N60, SM2300NSAC, SM3113NSUC, SM4028NSUC-TRG, SM4307PSKPC, SM4927BSKC, SM4953KC, SP8K1TB, SP8M3-TB

Keywords - SIR802DP-T1-GE3 MOSFET specs

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