UT8205AG-AG6 Todos los transistores

 

UT8205AG-AG6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT8205AG-AG6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 330 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 typ Ohm

Encapsulados: TSOP6

 Búsqueda de reemplazo de UT8205AG-AG6 MOSFET

- Selecciónⓘ de transistores por parámetros

 

UT8205AG-AG6 datasheet

 ..1. Size:1472K  cn vbsemi
ut8205ag-ag6.pdf pdf_icon

UT8205AG-AG6

UT8205AG-AG6 www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2

 ..2. Size:405K  cn tech public
ut8205ag-ag6.pdf pdf_icon

UT8205AG-AG6

www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw

 0.1. Size:420K  utc
ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf pdf_icon

UT8205AG-AG6

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch

 7.1. Size:217K  utc
ut8205a.pdf pdf_icon

UT8205AG-AG6

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re

Otros transistores... TP0101TS-T1 , TPCA8036 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , UT2955G , UT6898G-S08-R , IRF640 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X , VB1240B , VB1240X , VB1330X .

History: FDMS3604AS | FDMS5352 | TN0106

 

 

 

 

↑ Back to Top
.