UT8205AG-AG6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT8205AG-AG6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 330 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024(typ) Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de UT8205AG-AG6 MOSFET
UT8205AG-AG6 Datasheet (PDF)
ut8205ag-ag6.pdf

UT8205AG-AG6www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G2
ut8205ag-ag6.pdf

www.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.tw
ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch
ut8205a.pdf

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re
Otros transistores... TP0101TS-T1 , TPCA8036 , UT100N03L , UT2301G-AE3-R , UT2302G-AE3 , UT2302L-AE3 , UT2955G , UT6898G-S08-R , IRFP460 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X , VB1240B , VB1240X , VB1330X .
History: NDH8503N | RJK0303DPC | SSG4841P | IPU78CN10N | BLM4953A | WM02N45M | IPP180N10N3G
History: NDH8503N | RJK0303DPC | SSG4841P | IPU78CN10N | BLM4953A | WM02N45M | IPP180N10N3G



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2sc1913 | c2314 transistor | c2482 transistor | 2sc1222 replacement | 2sa725 | c5242 transistor | 2sa726 replacement | a1941 datasheet