UT8205AG-AG6 PDF and Equivalents Search

 

UT8205AG-AG6 Specs and Replacement

Type Designator: UT8205AG-AG6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 330 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 typ Ohm

Package: TSOP6

UT8205AG-AG6 substitution

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UT8205AG-AG6 datasheet

 ..1. Size:1472K  cn vbsemi
ut8205ag-ag6.pdf pdf_icon

UT8205AG-AG6

UT8205AG-AG6 www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2... See More ⇒

 ..2. Size:405K  cn tech public
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UT8205AG-AG6

www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw www.sot23.com.tw ... See More ⇒

 0.1. Size:420K  utc
ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf pdf_icon

UT8205AG-AG6

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch... See More ⇒

 7.1. Size:217K  utc
ut8205a.pdf pdf_icon

UT8205AG-AG6

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re... See More ⇒

Detailed specifications: TP0101TS-T1, TPCA8036, UT100N03L, UT2301G-AE3-R, UT2302G-AE3, UT2302L-AE3, UT2955G, UT6898G-S08-R, IRF640, UTT25P10L, UTT80N10, VB1102M, VB1106K, VB1218X, VB1240B, VB1240X, VB1330X

Keywords - UT8205AG-AG6 MOSFET specs

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