VB1240X Todos los transistores

 

VB1240X MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VB1240X

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 316 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 typ Ohm

Encapsulados: SOT23

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VB1240X datasheet

 ..1. Size:1430K  cn vbsemi
vb1240x.pdf pdf_icon

VB1240X

VB1240X www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition = 4.5V 8 TrenchFET Gen III Power MOSFET at V 0.014 GS 20 9nC 100 % Rg Tested 0.018 7 at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D (SOT-23) G 1 G 3 D

 8.1. Size:711K  cn vbsemi
vb1240b.pdf pdf_icon

VB1240X

VB1240B www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 TrenchFET power MOSFET RDS(on) max. ( ) at VGS = 4.5V 0.020 Low on-resistance RDS(on) max. ( ) at VGS = 2.5V 0.025 100 % Rg tested Qg typ. (nC 4.0 Material categorization ID (A) a, e 7 for definitions of compliance please see Configuration Single D SOT-23 (3) G 1 G

 8.2. Size:600K  cn vbsemi
vb1240.pdf pdf_icon

VB1240X

VB1240 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.0318 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.0414 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 9.1. Size:165K  onsemi
nsvb124xpdxv6t1g.pdf pdf_icon

VB1240X

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

Otros transistores... UT6898G-S08-R , UT8205AG-AG6 , UTT25P10L , UTT80N10 , VB1102M , VB1106K , VB1218X , VB1240B , IRFB4227 , VB1330X , VB162KX , VB2140 , VB2290A , VB2658 , VB562K , VB7101M , VB7322 .

History: SE150110G | SFS06R10DF | AOD4120

 

 

 


History: SE150110G | SFS06R10DF | AOD4120

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