All MOSFET. VB1240X Datasheet

 

VB1240X MOSFET. Datasheet pdf. Equivalent


   Type Designator: VB1240X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 316 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014(typ) Ohm
   Package: SOT23

 VB1240X Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VB1240X Datasheet (PDF)

 ..1. Size:1430K  cn vbsemi
 vb1240x.pdf

VB1240X VB1240X

VB1240Xwww.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition= 4.5V 8 TrenchFET Gen III Power MOSFETat V0.014 GS 209nC 100 % Rg Tested0.018 7at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECD(SOT-23)G 1G3 D

 8.1. Size:711K  cn vbsemi
 vb1240b.pdf

VB1240X VB1240X

VB1240Bwww.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARYVDS (V) 20 TrenchFET power MOSFETRDS(on) max. () at VGS = 4.5V 0.020 Low on-resistanceRDS(on) max. () at VGS = 2.5V 0.025 100 % Rg testedQg typ. (nC 4.0 Material categorization:ID (A) a, e 7for definitions of compliance please seeConfiguration SingleDSOT-23(3)G 1G

 8.2. Size:600K  cn vbsemi
 vb1240.pdf

VB1240X VB1240X

VB1240www.VBsemi.comN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.0318 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.0414 at VGS = 1.8 V 5.6APPLICATIONS DC/D

 9.1. Size:165K  onsemi
 nsvb124xpdxv6t1g.pdf

VB1240X VB1240X

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WMO10N100C2 | KP901B | KP750A | UTT25P10L-TF3-T | IRFBG30PBF | WMK53N60C4 | HM2319A

 

 
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