VBA1203M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBA1203M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.260(typ) Ohm
   Paquete / Cubierta: SO8

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VBA1203M Datasheet (PDF)

..1. Size:708K cn vbsemi
vba1203m.pdf

VBA1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann

8.1. Size:465K fuji
6mbp50vba120-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP50VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

8.2. Size:452K fuji
6mbp25vba120-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP25VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

8.3. Size:478K fuji
6mbp35vba120-50.pdf

http://www.fujielectric.com/products/semiconductor/6MBP35VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 35A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

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