VBA1203M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBA1203M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V
Qgⓘ - Carga de la puerta: 34 nC
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 180 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.260 typ Ohm
Encapsulados: SO8
Búsqueda de reemplazo de VBA1203M MOSFET
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VBA1203M datasheet
vba1203m.pdf
VBA1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D Primary Side Switch SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 S Top View N-Chann
6mbp50vba120-50.pdf
http //www.fujielectric.com/products/semiconductor/ 6MBP50VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
6mbp25vba120-50.pdf
http //www.fujielectric.com/products/semiconductor/ 6MBP25VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 25A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
6mbp35vba120-50.pdf
http //www.fujielectric.com/products/semiconductor/ 6MBP35VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 35A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
Otros transistores... VB2658 , VB562K , VB7101M , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N , 2SK3878 , VBA1210 , VBA1302 , VBA1303 , VBA1310S , VBA1311 , VBA1405 , VBA1410 , VBA2107 .
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Liste
Recientemente añadidas las descripciónes de los transistores:
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