VBA1203M MOSFET. Datasheet pdf. Equivalent
Type Designator: VBA1203M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 34 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.260(typ) Ohm
Package: SO8
VBA1203M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBA1203M Datasheet (PDF)
vba1203m.pdf
VBA1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann
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