VBA1203M - аналоги, параметры транзистора - Справочник транзисторов

VBA1203M даташит

..1. Size:708K cn vbsemi
vba1203m.pdf pdf_icon

VBA1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D Primary Side Switch SO-8 SD 1 8 SD 2 7 G SD 3 6 GD 4 5 S Top View N-Chann

8.1. Size:465K fuji
6mbp50vba120-50.pdf pdf_icon

http //www.fujielectric.com/products/semiconductor/ 6MBP50VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

8.2. Size:452K fuji
6mbp25vba120-50.pdf pdf_icon

http //www.fujielectric.com/products/semiconductor/ 6MBP25VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 25A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

8.3. Size:478K fuji
6mbp35vba120-50.pdf pdf_icon

http //www.fujielectric.com/products/semiconductor/ 6MBP35VBA120-50 IGBT Modules IGBT MODULE (V series) 1200V / 35A / IPM Features Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

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