VBA1203M - параметры транзистора MOSFET, его аналоги, datasheet

VBA1203M Datasheet (PDF)

..1. Size:708K cn vbsemi
vba1203m.pdf pdf_icon

VBA1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann

8.1. Size:465K fuji
6mbp50vba120-50.pdf pdf_icon

http://www.fujielectric.com/products/semiconductor/6MBP50VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

8.2. Size:452K fuji
6mbp25vba120-50.pdf pdf_icon

http://www.fujielectric.com/products/semiconductor/6MBP25VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

8.3. Size:478K fuji
6mbp35vba120-50.pdf pdf_icon

http://www.fujielectric.com/products/semiconductor/6MBP35VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 35A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote

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