VBA1203M - Даташиты. Аналоги. Основные параметры
Наименование производителя: VBA1203M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.260(typ) Ohm
Тип корпуса: SO8
Аналог (замена) для VBA1203M
VBA1203M Datasheet (PDF)
vba1203m.pdf
VBA1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.260 at VGS = 10 V 3 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSD Primary Side SwitchSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Chann
6mbp50vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP50VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
6mbp25vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP25VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 25A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
6mbp35vba120-50.pdf
http://www.fujielectric.com/products/semiconductor/6MBP35VBA120-50 IGBT ModulesIGBT MODULE (V series)1200V / 35A / IPMFeatures Temperature protection provided by directly detecting the junction temperature of the IGBTs Low power loss and soft switching Compatible with existing IPM-N series packages High performance and high reliability IGBT with overheating prote
Другие MOSFET... VB2658 , VB562K , VB7101M , VB7322 , VB7638 , VB8658 , VB9220 , VBA1101N , 2SK3878 , VBA1210 , VBA1302 , VBA1303 , VBA1310S , VBA1311 , VBA1405 , VBA1410 , VBA2107 .
History: NVMFS6H858NL | PPMS8N20V3 | BUK9Y4R4-40E | NVMFS6H848N | AP85T10AGI-HF | AO6801 | NTB5411NT4G
History: NVMFS6H858NL | PPMS8N20V3 | BUK9Y4R4-40E | NVMFS6H848N | AP85T10AGI-HF | AO6801 | NTB5411NT4G
Список транзисторов
Обновления
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