VBA1310S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBA1310S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 30.5 nC
Tiempo de subida (tr): 4.8 nS
Conductancia de drenaje-sustrato (Cd): 322 pF
Resistencia entre drenaje y fuente RDS(on): 0.008(typ) Ohm
Paquete / Cubierta: SOIC8
Búsqueda de reemplazo de MOSFET VBA1310S
VBA1310S Datasheet (PDF)
vba1310s.pdf
VBA1310Swww.VBsemi.comN-Channel Enhancement Mode Field Effect Transistor with Schottky DiodeGeneral Description FeaturesThe VBA1310S uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 12 A (VGS = 10V)body diode characteristics.This device is suitable for RDS(ON)
vba1311.pdf
VBA1311www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
vba1303.pdf
VBA1303www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.003 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.004 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS
vba1328.pdf
VBA1328www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.032 at VGS = 10 V 6.8 TrenchFET Power MOSFET30 9.2 nC Compliant to RoHS Directive 2002/95/EC0.045 at VGS = 4.5 V 5.8APPLICATIONS Notebook Load SwitchD Low Current dc-to-dcSO-8 SD
vba1302.pdf
VBA1302www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0020 at VGS = 10 V 25 TrenchFET Gen II300.0030 at VGS = 4.5 V Ultra Low On-Resistance Using High 22Density TrenchFET Power MOSFET TechnologyAPPLICATIONS Synchronous Buck Low-Side- Notebook-
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SIR638DP | NCE3015S | JSM7240 | SRT10N070L
