VBA1310S - описание и поиск аналогов

VBA1310S www.VBsemi.com N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The VBA1310S uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 12 A (VGS = 10V) body diode characteristics.This device is suitable for RDS(ON)

VBA1311 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

VBA1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.003 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.004 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

VBA1328 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.032 at VGS = 10 V 6.8 TrenchFET Power MOSFET 30 9.2 nC Compliant to RoHS Directive 2002/95/EC 0.045 at VGS = 4.5 V 5.8 APPLICATIONS Notebook Load Switch D Low Current dc-to-dc SO-8 SD

VBA1302 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0020 at VGS = 10 V 25 TrenchFET Gen II 30 0.0030 at VGS = 4.5 V Ultra Low On-Resistance Using High 22 Density TrenchFET Power MOSFET Technology APPLICATIONS Synchronous Buck Low-Side - Notebook -