VBA1310S Datasheet and Replacement

VBA1310Swww.VBsemi.comN-Channel Enhancement Mode Field Effect Transistor with Schottky DiodeGeneral Description FeaturesThe VBA1310S uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity and ID = 12 A (VGS = 10V)body diode characteristics.This device is suitable for RDS(ON)

VBA1311www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.008 at VGS = 10 V 1330 6.1 nC Optimized for High-Side Synchronous0.011 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

VBA1303www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.003 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.004 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

VBA1328www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.032 at VGS = 10 V 6.8 TrenchFET Power MOSFET30 9.2 nC Compliant to RoHS Directive 2002/95/EC0.045 at VGS = 4.5 V 5.8APPLICATIONS Notebook Load SwitchD Low Current dc-to-dcSO-8 SD

VBA1302www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0020 at VGS = 10 V 25 TrenchFET Gen II300.0030 at VGS = 4.5 V Ultra Low On-Resistance Using High 22Density TrenchFET Power MOSFET TechnologyAPPLICATIONS Synchronous Buck Low-Side- Notebook-