TSA20N60MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSA20N60MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 385 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 57 nC
trⓘ - Tiempo de subida: 149 nS
Cossⓘ - Capacitancia de salida: 264 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO3P
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TSA20N60MR Datasheet (PDF)
tsa20n60mr.pdf
TSA20N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs
tsa20n65mr.pdf
TSA20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with
tsa20n50m.pdf
TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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