All MOSFET. TSA20N60MR Datasheet

 

TSA20N60MR Datasheet and Replacement


   Type Designator: TSA20N60MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 385 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 149 nS
   Cossⓘ - Output Capacitance: 264 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

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TSA20N60MR Datasheet (PDF)

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TSA20N60MR

TSA20N60MR600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs

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 tsa20n65mr.pdf pdf_icon

TSA20N60MR

TSA20N65MR650V N-Channel MOSFETGeneral Description Features This Power MOSFET is produced using Truesemis 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and with

 8.1. Size:846K  truesemi
 tsa20n50m.pdf pdf_icon

TSA20N60MR

TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

Datasheet: VBA4338 , VBA4658 , VBA4670 , VBA5102M , VBA5325 , VBA5415 , TSA100N20M , TSA18N50MR , AO3401 , TSA20N65MR , TSA23N50M , TSA24N50M , TSA28N50M , TSA3878 , TSA50N20MK , TSA82N25M , TSA82N30M .

Keywords - TSA20N60MR MOSFET datasheet

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