TSA20N60MR Specs and Replacement
Type Designator: TSA20N60MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 385 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 149 nS
Cossⓘ - Output Capacitance: 264 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3P
TSA20N60MR substitution
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TSA20N60MR datasheet
tsa20n60mr.pdf
TSA20N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withs... See More ⇒
tsa20n65mr.pdf
TSA20N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,650V,RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and with... See More ⇒
tsa20n50m.pdf
TSA20N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,500V,Max.RDS(on)=0.28 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 70nC) minimize on-state resistance, provide superior switching High ruggedness performance, and... See More ⇒
Detailed specifications: VBA4338, VBA4658, VBA4670, VBA5102M, VBA5325, VBA5415, TSA100N20M, TSA18N50MR, 2SK3568, TSA20N65MR, TSA23N50M, TSA24N50M, TSA28N50M, TSA3878, TSA50N20MK, TSA82N25M, TSA82N30M
Keywords - TSA20N60MR MOSFET specs
TSA20N60MR cross reference
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History: KQB9N50
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