TSF16N65MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF16N65MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 16 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 121 nS
Conductancia de drenaje-sustrato (Cd): 225 pF
Resistencia entre drenaje y fuente RDS(on): 0.52 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET TSF16N65MR
TSF16N65MR Datasheet (PDF)
tsf16n65mr.pdf
TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC)performance, and withstand high e
tsf16n60mr.pdf
TSF16N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,600V,Max.RDS(on)=0.47 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
tsf16n50mr.pdf
TSF16N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 32nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
