TSF16N65MR Specs and Replacement
Type Designator: TSF16N65MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO220F
TSF16N65MR substitution
- MOSFET ⓘ Cross-Reference Search
TSF16N65MR datasheet
tsf16n65mr.pdf
TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC) performance, and withstand high e... See More ⇒
tsf16n60mr.pdf
TSF16N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16A,600V,Max.RDS(on)=0.47 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC) minimize on-state resistance, provide superior switching High ruggedness performance, a... See More ⇒
tsf16n50mr.pdf
TSF16N50MR 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 32nC) minimize on-state resistance, provide superior switching High ruggedness performance, and withs... See More ⇒
Detailed specifications: TSD5N60M, TSU5N60M, TSD5N65M, TSU5N65M, TSD840MD, TSF10N80M, TSF16N50MR, TSF16N60MR, 7N60, TSF18N20M, TSF18N50MR, TSF18N60MR, TSF20N50M, TSF20N60MR, TSF20N65MR, TSF4N90M, TSF60R190S2
Keywords - TSF16N65MR MOSFET specs
TSF16N65MR cross reference
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