TSF16N65MR Datasheet and Replacement
Type Designator: TSF16N65MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 225 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO220F
TSF16N65MR substitution
TSF16N65MR Datasheet (PDF)
tsf16n65mr.pdf

TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC)performance, and withstand high e
tsf16n60mr.pdf

TSF16N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,600V,Max.RDS(on)=0.47 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
tsf16n50mr.pdf

TSF16N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 32nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs
Datasheet: TSD5N60M , TSU5N60M , TSD5N65M , TSU5N65M , TSD840MD , TSF10N80M , TSF16N50MR , TSF16N60MR , MMIS60R580P , TSF18N20M , TSF18N50MR , TSF18N60MR , TSF20N50M , TSF20N60MR , TSF20N65MR , TSF4N90M , TSF60R190S2 .
History: PMZB200UNE
Keywords - TSF16N65MR MOSFET datasheet
TSF16N65MR cross reference
TSF16N65MR equivalent finder
TSF16N65MR lookup
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History: PMZB200UNE



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