TSF10N65M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF10N65M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 165 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de TSF10N65M MOSFET
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TSF10N65M datasheet
tsp10n65m tsf10n65m.pdf
TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance, a
tsp10n60m tsf10n60m.pdf
TSP10N60M/TSF10N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 48nC) minimize on-state resistance, provide superior switching High ruggedness performance,
tsf10n80m.pdf
TSF10N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 10.0A,800V,Max.RDS(on)=1.10 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness performance,
Otros transistores... TSF840MD, TSF840MR, TSF9N90M, TSK80R240S1, TSK82N25M, TSP10N60M, TSF10N60M, TSP10N65M, IRF540N, TSP12N60M, TSF12N60M, TSP12N65M, TSF12N65M, TSP13N50M, TSF13N50M, TSP4N60M, TSF4N60M
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