TSF10N65M Datasheet and Replacement
Type Designator: TSF10N65M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 48 nC
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
TSF10N65M substitution
TSF10N65M Datasheet (PDF)
tsp10n65m tsf10n65m.pdf

TSP10N65M/TSF10N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,650V,Max.RDS(on)=1.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
tsp10n60m tsf10n60m.pdf

TSP10N60M/TSF10N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 10.0A,600V,Max.RDS(on)=0.8 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 48nC)minimize on-state resistance, provide superior switching High ruggednessperformance,
tsf10n80m.pdf

TSF10N80M 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 10.0A,800V,Max.RDS(on)=1.10 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC)minimize on-state resistance, provide superior switching High ruggednessperformance,
Datasheet: TSF840MD , TSF840MR , TSF9N90M , TSK80R240S1 , TSK82N25M , TSP10N60M , TSF10N60M , TSP10N65M , IRF540 , TSP12N60M , TSF12N60M , TSP12N65M , TSF12N65M , TSP13N50M , TSF13N50M , TSP4N60M , TSF4N60M .
Keywords - TSF10N65M MOSFET datasheet
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History: DH065N04F | JCS730VC



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