CSD86360Q5D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CSD86360Q5D
   Código: 86360D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 13 W
   Voltaje máximo drenador - fuente |Vds|: 25 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 50 A
   Temperatura máxima de unión (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
   Carga de la puerta (Qg): 9.7 nC
   Tiempo de subida (tr): 20.4 nS
   Conductancia de drenaje-sustrato (Cd): 840 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0037 Ohm
   Paquete / Cubierta: SON5X6

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CSD86360Q5D Datasheet (PDF)

..1. Size:1169K texas
csd86360q5d.pdf

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability

8.1. Size:1426K texas
csd86330q3d.pdf

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability

8.2. Size:1459K texas
csd86350q5d.pdf

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a

8.3. Size:495K texas
csd86311w1723.pdf

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd

8.4. Size:712K cdil
csb764 csd863.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL PLANAR SILICON TRANSISTORS CSB764 PNPCSD863 NPNTO-92LPlastic PackageVoltage Regulator, Relay Lamp Driver Electrical Equipment ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 50 VVEB

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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