CSD86360Q5D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD86360Q5D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.4 nS

Cossⓘ - Capacitancia de salida: 840 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm

Encapsulados: SON5X6

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CSD86360Q5D datasheet

 ..1. Size:1169K  texas
 csd86360q5d.pdf pdf_icon

CSD86360Q5D

CSD86360Q5D www.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013 Synchronous Buck NexFET Power Block 1 DESCRIPTION FEATURES The CSD86360Q5D NexFET power block is an 2 Half-Bridge Power Block optimized design for synchronous buck applications 91% system Efficiency at 25A offering high current, high efficiency, and high Up To 50A Operation frequency capability

 8.1. Size:1426K  texas
 csd86330q3d.pdf pdf_icon

CSD86360Q5D

CSD86330Q3D www.ti.com SLPS264C OCTOBER 2010 REVISED OCTOBER 2011 Synchronous Buck NexFET Power Block 1 DESCRIPTION FEATURES The CSD86330Q3D NexFET power block is an 2 Half-Bridge Power Block optimized design for synchronous buck applications 90% System Efficiency at 15A offering high current, high efficiency, and high Up To 20A Operation frequency capability

 8.2. Size:1459K  texas
 csd86350q5d.pdf pdf_icon

CSD86360Q5D

CSD86350Q5D www.ti.com SLPS223E MAY 2010 REVISED OCTOBER 2011 Synchronous Buck NexFET Power Block 1 DESCRIPTION FEATURES The CSD86350Q5D NexFET power block is an 2 Half-Bridge Power Block optimized design for synchronous buck applications 90% system Efficiency at 25A offering high current, high efficiency, and high Up To 40A Operation frequency capability in a

 8.3. Size:495K  texas
 csd86311w1723.pdf pdf_icon

CSD86360Q5D

CSD86311W1723 www.ti.com SLPS251 MAY 2010 Dual N-Channel NexFET Power MOSFET Check for Samples CSD86311W1723 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 25 V Dual N-Ch MOSFETs Qg Gate Charge Total (4.5V) 3.1 nC Common Source Configuration Qgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mm VGS = 2.5V 37 m Ultra Low Qg and Qgd

MOSTRAR MÁS

Otros transistores... YJS4606A, YJS8205A, CSD15380F3, CSD17581Q5A, CSD17585F5, CSD18543Q3A, CSD19538Q3A, CSD23280F3, IRFB4110, CSD87333Q3D, CSD87335Q3D, CSD87355Q5D, CSD87384M, CSD87588N, CSD88537ND, TPS1100, TPS1100Y