Справочник MOSFET. CSD86360Q5D

 

CSD86360Q5D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CSD86360Q5D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 13 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 125 °C
   tr ⓘ - Время нарастания: 20.4 ns
   Cossⓘ - Выходная емкость: 840 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: SON5X6
 

 Аналог (замена) для CSD86360Q5D

   - подбор ⓘ MOSFET транзистора по параметрам

 

CSD86360Q5D Datasheet (PDF)

 ..1. Size:1169K  texas
csd86360q5d.pdfpdf_icon

CSD86360Q5D

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability

 8.1. Size:1426K  texas
csd86330q3d.pdfpdf_icon

CSD86360Q5D

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability

 8.2. Size:1459K  texas
csd86350q5d.pdfpdf_icon

CSD86360Q5D

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a

 8.3. Size:495K  texas
csd86311w1723.pdfpdf_icon

CSD86360Q5D

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd

Другие MOSFET... YJS4606A , YJS8205A , CSD15380F3 , CSD17581Q5A , CSD17585F5 , CSD18543Q3A , CSD19538Q3A , CSD23280F3 , IRF640N , CSD87333Q3D , CSD87335Q3D , CSD87355Q5D , CSD87384M , CSD87588N , CSD88537ND , TPS1100 , TPS1100Y .

History: HM4430 | LPM2302B3F | AOD2916 | SSI1N50A | SSG4902NA | GT4953 | KHB7D0N65F2

 

 
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