All MOSFET. CSD86360Q5D Datasheet

 

CSD86360Q5D Datasheet and Replacement


   Type Designator: CSD86360Q5D
   Marking Code: 86360D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Qg ⓘ - Total Gate Charge: 9.7 nC
   tr ⓘ - Rise Time: 20.4 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: SON5X6
 

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CSD86360Q5D Datasheet (PDF)

 ..1. Size:1169K  texas
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CSD86360Q5D

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability

 8.1. Size:1426K  texas
csd86330q3d.pdf pdf_icon

CSD86360Q5D

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability

 8.2. Size:1459K  texas
csd86350q5d.pdf pdf_icon

CSD86360Q5D

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a

 8.3. Size:495K  texas
csd86311w1723.pdf pdf_icon

CSD86360Q5D

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd

Datasheet: YJS4606A , YJS8205A , CSD15380F3 , CSD17581Q5A , CSD17585F5 , CSD18543Q3A , CSD19538Q3A , CSD23280F3 , IRF640N , CSD87333Q3D , CSD87335Q3D , CSD87355Q5D , CSD87384M , CSD87588N , CSD88537ND , TPS1100 , TPS1100Y .

History: VBZMB7N65 | MTA90N03ZN3

Keywords - CSD86360Q5D MOSFET datasheet

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