All MOSFET. CSD86360Q5D Datasheet

 

CSD86360Q5D MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSD86360Q5D
   Marking Code: 86360D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Qgⓘ - Total Gate Charge: 9.7 nC
   trⓘ - Rise Time: 20.4 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: SON5X6

 CSD86360Q5D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSD86360Q5D Datasheet (PDF)

 ..1. Size:1169K  texas
 csd86360q5d.pdf

CSD86360Q5D CSD86360Q5D

CSD86360Q5Dwww.ti.com SLPS327A SEPTEMBER 2012 REVISED MAY 2013Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86360Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 91% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 50A Operationfrequency capability

 8.1. Size:1426K  texas
 csd86330q3d.pdf

CSD86360Q5D CSD86360Q5D

CSD86330Q3Dwww.ti.com SLPS264C OCTOBER 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86330Q3D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% System Efficiency at 15Aoffering high current, high efficiency, and high Up To 20A Operationfrequency capability

 8.2. Size:1459K  texas
 csd86350q5d.pdf

CSD86360Q5D CSD86360Q5D

CSD86350Q5Dwww.ti.com SLPS223E MAY 2010REVISED OCTOBER 2011Synchronous Buck NexFET Power Block1 DESCRIPTIONFEATURESThe CSD86350Q5D NexFET power block is an2 Half-Bridge Power Blockoptimized design for synchronous buck applications 90% system Efficiency at 25Aoffering high current, high efficiency, and high Up To 40A Operationfrequency capability in a

 8.3. Size:495K  texas
 csd86311w1723.pdf

CSD86360Q5D CSD86360Q5D

CSD86311W1723www.ti.com SLPS251 MAY 2010Dual N-Channel NexFET Power MOSFETCheck for Samples: CSD86311W1723PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 25 V Dual N-Ch MOSFETsQg Gate Charge Total (4.5V) 3.1 nC Common Source ConfigurationQgd Gate Charge Gate to Drain 0.33 nC Small Footprint 1.7 mm 2.3 mmVGS = 2.5V 37 m Ultra Low Qg and Qgd

 8.4. Size:712K  cdil
 csb764 csd863.pdf

CSD86360Q5D CSD86360Q5D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL PLANAR SILICON TRANSISTORS CSB764 PNPCSD863 NPNTO-92LPlastic PackageVoltage Regulator, Relay Lamp Driver Electrical Equipment ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C )DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 50 VVEB

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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