TPS1100Y Todos los transistores

 

TPS1100Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPS1100Y
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.791 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: CHIP

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TPS1100Y Datasheet (PDF)

 ..1. Size:710K  texas
tps1100 tps1100y.pdf

TPS1100Y
TPS1100Y

TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin

 7.1. Size:485K  texas
tps1100d tps1100pw.pdf

TPS1100Y
TPS1100Y

TPS1100, TPS1100YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS078C DECEMBER 1993 REVISED AUGUST 1995D OR PW PACKAGED Low rDS(on) . . . 0.18 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin

 8.1. Size:493K  texas
tps1101 tps1101y.pdf

TPS1100Y
TPS1100Y

TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP

 8.2. Size:490K  texas
tps1101d tps1101pwr.pdf

TPS1100Y
TPS1100Y

TPS1101, TPS1101YSINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETSSLVS079C DECEMBER 1993 REVISED AUGUST 1995D PACKAGED Low rDS(on) . . . 0.09 Typ at VGS = 10 V(TOP VIEW)D 3 V CompatibleD Requires No External VCCSOURCE 1 8 DRAINSOURCE 2 7 DRAIND TTL and CMOS Compatible InputsSOURCE DRAIN3 6D VGS(th) = 1.5 V MaxGATE DRAIN4 5D Available in Ultrathin TSSOP

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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