TPS1100Y Specs and Replacement

Type Designator: TPS1100Y

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.791 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: CHIP

TPS1100Y substitution

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TPS1100Y datasheet

 ..1. Size:710K  texas
 tps1100 tps1100y.pdf pdf_icon

TPS1100Y

TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C DECEMBER 1993 REVISED AUGUST 1995 D OR PW PACKAGE D Low rDS(on) . . . 0.18 Typ at VGS = 10 V (TOP VIEW) D 3 V Compatible D Requires No External VCC SOURCE 1 8 DRAIN SOURCE 2 7 DRAIN D TTL and CMOS Compatible Inputs SOURCE DRAIN 3 6 D VGS(th) = 1.5 V Max GATE DRAIN 4 5 D Available in Ultrathin ... See More ⇒

 7.1. Size:485K  texas
 tps1100d tps1100pw.pdf pdf_icon

TPS1100Y

TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C DECEMBER 1993 REVISED AUGUST 1995 D OR PW PACKAGE D Low rDS(on) . . . 0.18 Typ at VGS = 10 V (TOP VIEW) D 3 V Compatible D Requires No External VCC SOURCE 1 8 DRAIN SOURCE 2 7 DRAIN D TTL and CMOS Compatible Inputs SOURCE DRAIN 3 6 D VGS(th) = 1.5 V Max GATE DRAIN 4 5 D Available in Ultrathin ... See More ⇒

 8.1. Size:493K  texas
 tps1101 tps1101y.pdf pdf_icon

TPS1100Y

TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C DECEMBER 1993 REVISED AUGUST 1995 D PACKAGE D Low rDS(on) . . . 0.09 Typ at VGS = 10 V (TOP VIEW) D 3 V Compatible D Requires No External VCC SOURCE 1 8 DRAIN SOURCE 2 7 DRAIN D TTL and CMOS Compatible Inputs SOURCE DRAIN 3 6 D VGS(th) = 1.5 V Max GATE DRAIN 4 5 D Available in Ultrathin TSSOP ... See More ⇒

 8.2. Size:490K  texas
 tps1101d tps1101pwr.pdf pdf_icon

TPS1100Y

TPS1101, TPS1101Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS079C DECEMBER 1993 REVISED AUGUST 1995 D PACKAGE D Low rDS(on) . . . 0.09 Typ at VGS = 10 V (TOP VIEW) D 3 V Compatible D Requires No External VCC SOURCE 1 8 DRAIN SOURCE 2 7 DRAIN D TTL and CMOS Compatible Inputs SOURCE DRAIN 3 6 D VGS(th) = 1.5 V Max GATE DRAIN 4 5 D Available in Ultrathin TSSOP ... See More ⇒

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Detailed specifications: CSD86360Q5D, CSD87333Q3D, CSD87335Q3D, CSD87355Q5D, CSD87384M, CSD87588N, CSD88537ND, TPS1100, IRFB4115, TPS1101, TPS1101Y, TPS1120, TPS1120Y, TMA10N60H, TMA10N65H, TMP10N65H, TMA10N80H

Keywords - TPS1100Y MOSFET specs

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