TPW60R160M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPW60R160M
Código: 60R160M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 151 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 69 nS
Conductancia de drenaje-sustrato (Cd): 71 pF
Resistencia entre drenaje y fuente RDS(on): 0.16 Ohm
Paquete / Cubierta: TO247
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TPW60R160M Datasheet (PDF)
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