TPW60R160M - Даташиты. Аналоги. Основные параметры
Наименование производителя: TPW60R160M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 151 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 69 ns
Cossⓘ - Выходная емкость: 71 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO247
Аналог (замена) для TPW60R160M
TPW60R160M Datasheet (PDF)
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TPW60R040MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
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TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device
Другие MOSFET... TMP120N10A , TMP160N10A , TPA120R800A , TPB120R800A , TPW120R800A , TPA60R160M , TPP60R160M , TPV60R160M , IRFZ46N , TPA60R170MFD , TPA60R240M , TPB60R240M , TPC60R240M , TPP60R240M , TPA60R260MFD , TPA60R330M , TPA60R360MFD .
History: 2SJ530L | ALD1102ASAL | AOD66923
History: 2SJ530L | ALD1102ASAL | AOD66923



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