All MOSFET. TPW60R160M Datasheet

 

TPW60R160M MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPW60R160M
   Marking Code: 60R160M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247

 TPW60R160M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPW60R160M Datasheet (PDF)

 ..1. Size:671K  cn wuxi unigroup
 tpa60r160m tpp60r160m tpv60r160m tpw60r160m.pdf

TPW60R160M TPW60R160M

TPA60R160M, TPP60R160M, TPV60R160M, TPW60R160M WuxiUnigroupMicroelectronicsCompany600V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Package InformationDevic

 7.1. Size:858K  cn wuxi unigroup
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TPW60R160M TPW60R160M

TPR60R120MFD,TPW60R120MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l

 8.1. Size:457K  cn wuxi unigroup
 tpw60r040mfd.pdf

TPW60R160M TPW60R160M

TPW60R040MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 8.2. Size:359K  cn wuxi unigroup
 tpv60r080cfd tpw60r080cfd.pdf

TPW60R160M TPW60R160M

TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device

 8.3. Size:454K  cn wuxi unigroup
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TPW60R160M TPW60R160M

TPW60R090MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 8.4. Size:445K  cn wuxi unigroup
 tpw60r080m.pdf

TPW60R160M TPW60R160M

TPW60R080M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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