TPC65R260M Todos los transistores

 

TPC65R260M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC65R260M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 63 nS
   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO262
 

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TPC65R260M Datasheet (PDF)

 ..1. Size:1069K  cn wuxi unigroup
 tpa65r260m tpb65r260m tpc65r260m tpp65r260m tpv65r260m tpw65r260m.pdf pdf_icon

TPC65R260M

TPA65R260M, TPB65R260M, TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Pac

 7.1. Size:755K  cn wuxi unigroup
 tpa65r280d tpb65r280d tpc65r280d tpd65r280d tpp65r280d tpu65r280d.pdf pdf_icon

TPC65R260M

TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPC65R260M

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 8.2. Size:947K  cn wuxi unigroup
 tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPC65R260M

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

MOSTRAR MÁS

Otros transistores... TPA65R180D , TPA65R190MFD , TPA65R1K5M , TPD65R1K5M , TPU65R1K5M , TPY65R1K5MB , TPA65R260M , TPB65R260M , STP75NF75 , TPP65R260M , TPV65R260M , TPW65R260M , TPA65R280D , TPB65R280D , TPC65R280D , TPD65R280D , TPP65R280D .

History: DMN2029USD | NCE50NF600I | BUK9Y4R4-40E | MMIX1F360N15T2 | IXFK94N50P2 | 2N6917 | PDN2311S

 

 
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