TPC65R260M Datasheet and Replacement
Type Designator: TPC65R260M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 43 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO262
TPC65R260M substitution
TPC65R260M Datasheet (PDF)
tpa65r260m tpb65r260m tpc65r260m tpp65r260m tpv65r260m tpw65r260m.pdf

TPA65R260M, TPB65R260M, TPC65R260M, TPP65R260M, TPV65R260M, TPW65R260MWuxiUnigroupMicroelectronicsCompany650V Super-Junction Power MOSFETFEATURESlVerylowFOMRDS(on)Qgl100%avalanchetestedlRoHScompliantAPPLICATIONSlSwitchModePowerSupply(SMPS)lUninterruptiblePowerSupply(UPS)lPowerFactorCorrection(PFC)Device Marking and Pac
tpa65r280d tpb65r280d tpc65r280d tpd65r280d tpp65r280d tpu65r280d.pdf

TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication
Datasheet: TPA65R180D , TPA65R190MFD , TPA65R1K5M , TPD65R1K5M , TPU65R1K5M , TPY65R1K5MB , TPA65R260M , TPB65R260M , STP75NF75 , TPP65R260M , TPV65R260M , TPW65R260M , TPA65R280D , TPB65R280D , TPC65R280D , TPD65R280D , TPP65R280D .
History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | 2SK2130 | IXTA4N150HV
Keywords - TPC65R260M MOSFET datasheet
TPC65R260M cross reference
TPC65R260M equivalent finder
TPC65R260M lookup
TPC65R260M substitution
TPC65R260M replacement
History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | 2SK2130 | IXTA4N150HV



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