FDB3860 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 2009FDB3860N-Channel PowerTrench MOSFET 100 V, 30 A, 37 mFeatures General Description Max rDS(on) = 37 m at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductors advanced Power Trench process. This part is High performance trench technology for extremely low rDS(on)tailored for low rDS(on) and low Qg figure of merit,

November 2013FDB38N30UN-Channel UniFETTM Ultra FRFETTM MOSFET300 V, 38 A, 120 mFeatures Description RDS(on) = 120 m (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 56 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better s

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur