FDB3860 - описание и поиск аналогов

March 2009 FDB3860 N-Channel PowerTrench MOSFET 100 V, 30 A, 37 m Features General Description Max rDS(on) = 37 m at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor s advanced Power Trench process. This part is High performance trench technology for extremely low rDS(on) tailored for low rDS(on) and low Qg figure of merit,

November 2013 FDB38N30U N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 m Features Description RDS(on) = 120 m (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 56 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better s

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur