All MOSFET. FDB3860 Datasheet

 

FDB3860 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB3860

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 71 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Package: TO263_D2PAK

FDB3860 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB3860 Datasheet (PDF)

1.1. fdb3860.pdf Size:297K _fairchild_semi

FDB3860
FDB3860

March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 m? Features General Description Max rDS(on) = 37 m? at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is High performance trench technology for extremely low rDS(on) tailored for low rDS(on) and low Qg figure of merit, with avalan

5.1. fdb38n30u.pdf Size:553K _fairchild_semi

FDB3860
FDB3860

November 2013 FDB38N30U N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38 A, 120 mΩ Features Description • RDS(on) = 120 mΩ (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 56 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better s

Datasheet: FDB3632 , STU40N01 , FDB3652_F085 , STU410S , FDB3672_F085 , STU411D , FDB3682 , STU412S , J112 , STU413S , FDB390N15A , FDB44N25 , FDB52N20 , STU417L , FDB5800 , FDB8132_F085 , STU326S .

 


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