FDB52N20 Todos los transistores

 

FDB52N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB52N20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 52 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
   Paquete / Cubierta: TO263 D2PAK
     - Selección de transistores por parámetros

 

FDB52N20 Datasheet (PDF)

 ..1. Size:937K  fairchild semi
 fdb52n20 fdb52n20tm.pdf pdf_icon

FDB52N20

July 2008UniFETTMFDB52N20200V N-Channel MOSFETFeatures Description 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 49 nC)DMOS technology. Low Crss ( typical 66 pF)This advanced technology has been especially tailored to m

 ..2. Size:525K  onsemi
 fdb52n20.pdf pdf_icon

FDB52N20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDC8886 | HITJ0203MP | SPP80P06PH | IRFPC42R | INK0001AM1 | SIHF9540S | UPA1873GR

 

 
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