FDB52N20 MOSFET Datasheet: N-Ch, 200V, 52A. Full specification with pinout and replacement list

FDB52N20 Specs and Replacement

Type Designator: FDB52N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm

Package: TO263 D2PAK

FDB52N20 substitution

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FDB52N20 datasheet

..1. Size:937K fairchild semi
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July 2008 UniFETTM FDB52N20 200V N-Channel MOSFET Features Description 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 49 nC) DMOS technology. Low Crss ( typical 66 pF) This advanced technology has been especially tailored to m... See More ⇒

..2. Size:525K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FDB3672F085, STU411D, FDB3682, STU412S, FDB3860, STU413S, FDB390N15A, FDB44N25, AO4407, STU417L, FDB5800, FDB8132F085, STU326S, FDB8160F085, STU312D, FDB8441, FDB8441F085