All MOSFET. FDB52N20 Datasheet

 

FDB52N20 Datasheet and Replacement


   Type Designator: FDB52N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO263 D2PAK
      - MOSFET Cross-Reference Search

 

FDB52N20 Datasheet (PDF)

 ..1. Size:937K  fairchild semi
 fdb52n20 fdb52n20tm.pdf pdf_icon

FDB52N20

July 2008UniFETTMFDB52N20200V N-Channel MOSFETFeatures Description 52A, 200V, RDS(on) = 0.049 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 49 nC)DMOS technology. Low Crss ( typical 66 pF)This advanced technology has been especially tailored to m

 ..2. Size:525K  onsemi
 fdb52n20.pdf pdf_icon

FDB52N20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDB3672F085 , STU411D , FDB3682 , STU412S , FDB3860 , STU413S , FDB390N15A , FDB44N25 , P0903BDG , STU417L , FDB5800 , FDB8132F085 , STU326S , FDB8160F085 , STU312D , FDB8441 , FDB8441F085 .

History: FDB9403-F085 | HUF76137S3S | IPB052N04NG | RU35122R | AUIRF7736M2TR | UTT24N06G-TN3-R | IRFH7545PBF

Keywords - FDB52N20 MOSFET datasheet

 FDB52N20 cross reference
 FDB52N20 equivalent finder
 FDB52N20 lookup
 FDB52N20 substitution
 FDB52N20 replacement

 

 
Back to Top

 


 
.