TPB65R120M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPB65R120M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 219 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: TO263
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TPB65R120M Datasheet (PDF)
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Otros transistores... TPB80R750C , TPC80R750C , TPD80R750C , TPP80R750C , TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , IRF3205 , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M .
History: 2SK0664G0L | NCEP85T16 | IRLR020 | FDMC8321LDC | APT6040BVR | INK0310AP1
History: 2SK0664G0L | NCEP85T16 | IRLR020 | FDMC8321LDC | APT6040BVR | INK0310AP1



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