TPB65R120M Todos los transistores

 

TPB65R120M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPB65R120M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 219 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO263
 
   - Selección ⓘ de transistores por parámetros

 

TPB65R120M Datasheet (PDF)

 ..1. Size:801K  cn wuxi unigroup
 tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf pdf_icon

TPB65R120M

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 7.1. Size:832K  cn wuxi unigroup
 tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf pdf_icon

TPB65R120M

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 7.2. Size:947K  cn wuxi unigroup
 tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPB65R120M

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:808K  cn wuxi unigroup
 tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf pdf_icon

TPB65R120M

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

MOSTRAR MÁS

Otros transistores... TPB80R750C , TPC80R750C , TPD80R750C , TPP80R750C , TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , IRF3205 , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M .

 

 
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