TPB65R120M Specs and Replacement

Type Designator: TPB65R120M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO263

TPB65R120M substitution

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TPB65R120M datasheet

 ..1. Size:801K  cn wuxi unigroup
tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf pdf_icon

TPB65R120M

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de... See More ⇒

 7.1. Size:832K  cn wuxi unigroup
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf pdf_icon

TPB65R120M

TPB65R135MFD,TPP65R135MFD,TPW65R135MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an ... See More ⇒

 7.2. Size:947K  cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPB65R120M

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication ... See More ⇒

 7.3. Size:808K  cn wuxi unigroup
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf pdf_icon

TPB65R120M

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160C Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct... See More ⇒

Detailed specifications: TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C, TPB65R075DFD, TPP65R075DFD, TPW65R075DFD, IRF3205, TPP65R120M, TPR65R120M, TPW65R120M, TPB65R135MFD, TPP65R135MFD, TPW65R135MFD, TPB70R950M, TPD70R950M

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