All MOSFET. TPB65R120M Datasheet

 

TPB65R120M MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPB65R120M
   Marking Code: 65R120M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 219 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 30 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 57 nC
   Rise Time (tr): 40 nS
   Drain-Source Capacitance (Cd): 90 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm
   Package: TO263

 TPB65R120M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPB65R120M Datasheet (PDF)

 ..1. Size:801K  cn wuxi unigroup
 tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf

TPB65R120M TPB65R120M

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 7.1. Size:832K  cn wuxi unigroup
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TPB65R120M TPB65R120M

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 7.2. Size:947K  cn wuxi unigroup
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TPB65R120M TPB65R120M

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:808K  cn wuxi unigroup
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TPB65R120M TPB65R120M

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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