TPB65R120M - Даташиты. Аналоги. Основные параметры
Наименование производителя: TPB65R120M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 219 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: TO263
Аналог (замена) для TPB65R120M
TPB65R120M Datasheet (PDF)
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Другие MOSFET... TPB80R750C , TPC80R750C , TPD80R750C , TPP80R750C , TPU80R750C , TPB65R075DFD , TPP65R075DFD , TPW65R075DFD , IRF3205 , TPP65R120M , TPR65R120M , TPW65R120M , TPB65R135MFD , TPP65R135MFD , TPW65R135MFD , TPB70R950M , TPD70R950M .
History: 2N4351 | NP40N055EHE | ST3400S23RG | IRHMS57160 | 2N4857A | NP40N055MHE | AP9960AGM-HF
History: 2N4351 | NP40N055EHE | ST3400S23RG | IRHMS57160 | 2N4857A | NP40N055MHE | AP9960AGM-HF
Список транзисторов
Обновления
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