TPW80R200MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPW80R200MFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 215 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 850 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46.2 nS
Cossⓘ - Capacitancia de salida: 59.94 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de TPW80R200MFD MOSFET
TPW80R200MFD Datasheet (PDF)
tpw80r200mfd.pdf

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Otros transistores... TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , IRFZ44N , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT .
History: HY1804P | AON6572 | IXFH12N80P | IPD06N03LBG | BUK964R4-40B | NTHL160N120SC1 | AON6458
History: HY1804P | AON6572 | IXFH12N80P | IPD06N03LBG | BUK964R4-40B | NTHL160N120SC1 | AON6458



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