TPW80R200MFD Datasheet and Replacement
Type Designator: TPW80R200MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 46.2 nS
Cossⓘ - Output Capacitance: 59.94 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
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TPW80R200MFD Datasheet (PDF)
tpw80r200mfd.pdf

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TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa
tpw80r300mfd.pdf

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Keywords - TPW80R200MFD MOSFET datasheet
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History: TK2P60D | IRFBG20



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