TPW80R200MFD Specs and Replacement
Type Designator: TPW80R200MFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46.2 nS
Cossⓘ - Output Capacitance: 59.94 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
TPW80R200MFD substitution
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TPW80R200MFD datasheet
tpw80r200mfd.pdf
TPW80R200MFD Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,... See More ⇒
tpa80r250a tpp80r250a tpw80r250a.pdf
TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa... See More ⇒
tpw80r300mfd.pdf
TPW80R300MFD Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,... See More ⇒
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf
TPA80R300C,TPB80R300C, TPP80R300C,TPW80R300C Wuxi Unigroup Microelectronics Co.,Ltd 800V Super-junction Power MOSFET Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse... See More ⇒
Detailed specifications: TPW60R040MFD, TPW60R080M, TPW60R090MFD, TPW65R040M, TPW65R044MFD, TPW65R090M, TPW65R190MFD, TPW70R100MFD, IRFZ44N, TPW80R300MFD, TPY70R1K5MB, TSB15N06A, TSB15N10A, TSD10N06AT, TSD120N10AT, TSP120N10AT, TSG120N10AT
Keywords - TPW80R200MFD MOSFET specs
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