All MOSFET. TPW80R200MFD Datasheet

 

TPW80R200MFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPW80R200MFD
   Marking Code: 80R200MFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 215 W
   Maximum Drain-Source Voltage |Vds|: 850 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 23 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 56.7 nC
   Rise Time (tr): 46.2 nS
   Drain-Source Capacitance (Cd): 59.94 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
   Package: TO247

 TPW80R200MFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPW80R200MFD Datasheet (PDF)

 ..1. Size:683K  cn wuxi unigroup
 tpw80r200mfd.pdf

TPW80R200MFD TPW80R200MFD

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 7.1. Size:567K  cn wuxi unigroup
 tpa80r250a tpp80r250a tpw80r250a.pdf

TPW80R200MFD TPW80R200MFD

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

 8.1. Size:686K  cn wuxi unigroup
 tpw80r300mfd.pdf

TPW80R200MFD TPW80R200MFD

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 8.2. Size:1210K  cn wuxi unigroup
 tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPW80R200MFD TPW80R200MFD

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 1N65G-T92-B

 

 
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