TPW80R200MFD Datasheet and Replacement
Type Designator: TPW80R200MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46.2 nS
Cossⓘ - Output Capacitance: 59.94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO247
TPW80R200MFD substitution
TPW80R200MFD Datasheet (PDF)
tpw80r200mfd.pdf

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa80r250a tpp80r250a tpw80r250a.pdf

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa
tpw80r300mfd.pdf

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
Datasheet: TPW60R040MFD , TPW60R080M , TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , IRFZ44N , TPW80R300MFD , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT .
History: LSF60R180HT | FDS7066N7 | VMO1200-01F | 7N60G-T2Q-T | OSG65R035HZF | CEP6060N | IXTH96N25T
Keywords - TPW80R200MFD MOSFET datasheet
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History: LSF60R180HT | FDS7066N7 | VMO1200-01F | 7N60G-T2Q-T | OSG65R035HZF | CEP6060N | IXTH96N25T



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