TPW80R300MFD Todos los transistores

 

TPW80R300MFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPW80R300MFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 850 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28.5 nS
   Cossⓘ - Capacitancia de salida: 49.59 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO247
 

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TPW80R300MFD Datasheet (PDF)

 ..1. Size:686K  cn wuxi unigroup
tpw80r300mfd.pdf pdf_icon

TPW80R300MFD

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 5.1. Size:1210K  cn wuxi unigroup
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf pdf_icon

TPW80R300MFD

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 8.1. Size:683K  cn wuxi unigroup
tpw80r200mfd.pdf pdf_icon

TPW80R300MFD

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 8.2. Size:567K  cn wuxi unigroup
tpa80r250a tpp80r250a tpw80r250a.pdf pdf_icon

TPW80R300MFD

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

Otros transistores... TPW60R080M , TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , IRF3205 , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT .

History: AO4801A | RQ3E180GN | CES2303 | H7P1006MD90TZ | HGP037N10T | FDS4435-NL | UT70N03L

 

 
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