Справочник MOSFET. TPW80R300MFD

 

TPW80R300MFD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPW80R300MFD
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 151 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 850 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 28.5 ns
   Cossⓘ - Выходная емкость: 49.59 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для TPW80R300MFD

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPW80R300MFD Datasheet (PDF)

 ..1. Size:686K  cn wuxi unigroup
tpw80r300mfd.pdfpdf_icon

TPW80R300MFD

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 5.1. Size:1210K  cn wuxi unigroup
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdfpdf_icon

TPW80R300MFD

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 8.1. Size:683K  cn wuxi unigroup
tpw80r200mfd.pdfpdf_icon

TPW80R300MFD

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 8.2. Size:567K  cn wuxi unigroup
tpa80r250a tpp80r250a tpw80r250a.pdfpdf_icon

TPW80R300MFD

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa

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History: RT3J22M | TTP118N08A | AOTF298L | NVTFS052P04M8L | LSB60R030HT | HGD090N06SL | SVG103R0NT

 

 
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