TPW80R300MFD Datasheet and Replacement
Type Designator: TPW80R300MFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 28.5 nS
Cossⓘ - Output Capacitance: 49.59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO247
TPW80R300MFD substitution
TPW80R300MFD Datasheet (PDF)
tpw80r300mfd.pdf

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
tpw80r200mfd.pdf

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa80r250a tpp80r250a tpw80r250a.pdf

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa
Datasheet: TPW60R080M , TPW60R090MFD , TPW65R040M , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , IRF3205 , TPY70R1K5MB , TSB15N06A , TSB15N10A , TSD10N06AT , TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT .
History: OSG65R099HSF | DH100P25B | LSB65R099GT | BUK9507-30B | RT3J22M | AO4712 | OSG60R2K2ASF
Keywords - TPW80R300MFD MOSFET datasheet
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History: OSG65R099HSF | DH100P25B | LSB65R099GT | BUK9507-30B | RT3J22M | AO4712 | OSG60R2K2ASF



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