TSJ10N06AT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSJ10N06AT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 123 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOP8

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TSJ10N06AT datasheet

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TSJ10N06AT

TSJ10N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa

 8.1. Size:571K  cn wuxi unigroup
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TSJ10N06AT

TSJ10N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P

 9.1. Size:304K  st
stsj100nhs3ll.pdf pdf_icon

TSJ10N06AT

STSJ100NHS3LL N-channel 30V - 0.0032 - 20A - PowerSO-8 STripFET III Power MOSFET plus monolithic schottky General features Type VDSS RDS(on) ID STSJ100NHS3LL 30V 0.0042 20A(1) 1. This value is rated accordingly to Rthj-pcb Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction losses PowerSO-8 Improved junction-case thermal resist

 9.2. Size:457K  st
stsj100nh3ll.pdf pdf_icon

TSJ10N06AT

STSJ100NH3LL N-CHANNEL 30 V - 0.0032 - 25 A PowerSO-8 STripFET III MOSFET FOR DC-DC CONVERSION Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID STSJ100NH3LL 30V

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