TSJ10N06AT Datasheet and Replacement
Type Designator: TSJ10N06AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 123 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SOP8
TSJ10N06AT Datasheet (PDF)
tsj10n06at.pdf

TSJ10N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa
tsj10n10at.pdf

TSJ10N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P
stsj100nhs3ll.pdf

STSJ100NHS3LLN-channel 30V - 0.0032 - 20A - PowerSO-8STripFETIII Power MOSFET plus monolithic schottkyGeneral featuresType VDSS RDS(on) IDSTSJ100NHS3LL 30V 0.0042 20A(1)1. This value is rated accordingly to Rthj-pcb Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction lossesPowerSO-8 Improved junction-case thermal resist
stsj100nh3ll.pdf

STSJ100NH3LLN-CHANNEL 30 V - 0.0032 - 25 A PowerSO-8STripFET III MOSFET FOR DC-DC CONVERSIONTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID STSJ100NH3LL 30V
Datasheet: TSD120N10AT , TSP120N10AT , TSG120N10AT , TSD12N06AT , TSG017N045AT , TSG10N06AT , TSG12N06AT , TSG12N10AT , IRF630 , TSJ10N10AT , TSP15N06A , TSP15N10A , TTB105N06A , TTP105N06A , TTB105N08A , TTP105N08A , TTB115N08A .
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