TSJ10N06AT - параметры транзистора MOSFET, его аналоги, datasheet

TSJ10N06AT Datasheet (PDF)

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TSJ10N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa

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TSJ10N10AT Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device P

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STSJ100NHS3LLN-channel 30V - 0.0032 - 20A - PowerSO-8STripFETIII Power MOSFET plus monolithic schottkyGeneral featuresType VDSS RDS(on) IDSTSJ100NHS3LL 30V 0.0042 20A(1)1. This value is rated accordingly to Rthj-pcb Optimal RDS(on) x Qg trade-off @ 4.5V Reduced switching losses Reduced conduction lossesPowerSO-8 Improved junction-case thermal resist

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STSJ100NH3LLN-CHANNEL 30 V - 0.0032 - 25 A PowerSO-8STripFET III MOSFET FOR DC-DC CONVERSIONTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID STSJ100NH3LL 30V

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .